Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum

One of the primary challenges in the field of spin-electronics, which exploits the electron's spin rather than its charge, is to create strong currents of electrons with polarized spins. One way to do this is to use a ferromagnet as a polarizer, a principle used in magnetic tunnel junctions; however, these devices suffer from reliability problems. An alternative is the spin Hall effect, where running a charge current through a material generates a spin current in the transverse direction, but the efficiency of this process tends to be small. Liu et al. (p. 555) now show that the spin Hall effect in Tantalum in its high-resistance β phase generates spin currents strong enough to induce switching of the magnetization of an adjacent ferromagnet; at the same time, Ta does not cause energy dissipation in the ferromagnet. These properties allowed efficient and reliable operation of a prototype three-terminal device.

Spin currents can apply useful torques in spintronic devices. The spin Hall effect has been proposed as a source of spin current, but its modest strength has limited its usefulness. We report a giant spin Hall effect (SHE) in β-tantalum that generates spin currents intense enough to induce efficient spin-torque switching of ferromagnets at room temperature. We quantify this SHE by three independent methods and demonstrate spin-torque switching of both out-of-plane and in-plane magnetized layers. We furthermore implement a three-terminal device that uses current passing through a tantalum-ferromagnet bilayer to switch a nanomagnet, with a magnetic tunnel junction for read-out. This simple, reliable, and efficient design may eliminate the main obstacles to the development of magnetic memory and nonvolatile spin logic technologies.