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Abstract

The semiconducting properties of a wide range of minerals are often ignored in the study of their interfacial geochemical behavior. We show that surface-specific charge density accumulation reactions combined with bulk charge carrier diffusivity create conditions under which interfacial electron transfer reactions at one surface couple with those at another via current flow through the crystal bulk. Specifically, we observed that a chemically induced surface potential gradient across hematite (α-Fe2O3) crystals is sufficiently high and the bulk electrical resistivity sufficiently low that dissolution of edge surfaces is linked to simultaneous growth of the crystallographically distinct (001) basal plane. The apparent importance of bulk crystal conduction is likely to be generalizable to a host of naturally abundant semiconducting minerals playing varied key roles in soils, sediments, and the atmosphere.
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This research was supported by the U.S. Department of Energy (DOE), Office of Basic Energy Sciences, Geosciences Program. It was performed at the William R. Wiley Environmental Molecular Sciences Laboratory (EMSL) at the Pacific Northwest National Laboratory (PNNL). The EMSL is funded by the DOE Office of Biological and Environmental Research. PNNL is operated by Battelle for the DOE under contract DE-AC06-76RLO 1830. We gratefully acknowledge the assistance of C. Wang for TEM; B. Arey for scanning electron microscopy; D. McCready for pole reflection x-ray diffraction; Y. Lin for access to electrochemistry apparatus; and A. Felmy, E. Ilton, and J. Amonette for comments on an early version of this manuscript.

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Science
Volume 320 | Issue 5873
11 April 2008

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Received: 4 January 2008
Accepted: 25 February 2008
Published in print: 11 April 2008

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Authors

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Svetlana V. Yanina
Chemical and Materials Sciences Division, Pacific Northwest National Laboratory, Post Office Box 999, MSIN K8-96, Richland, WA 99352, USA.
Kevin M. Rosso*
Chemical and Materials Sciences Division, Pacific Northwest National Laboratory, Post Office Box 999, MSIN K8-96, Richland, WA 99352, USA.

Notes

* To whom correspondence should be addressed. E-mail: [email protected]

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