A Stretchable Form of Single-Crystal Silicon for High-Performance Electronics on Rubber Substrates
Abstract
We have produced a stretchable form of silicon that consists of submicrometer single-crystal elements structured into shapes with microscale, periodic, wavelike geometries. When supported by an elastomeric substrate, this “wavy” silicon can be reversibly stretched and compressed to large levels of strain without damaging the silicon. The amplitudes and periods of the waves change to accommodate these deformations, thereby avoiding substantial strains in the silicon itself. Dielectrics, patterns of dopants, electrodes, and other elements directly integrated with the silicon yield fully formed, high-performance “wavy” metal oxide semiconductor field-effect transistors, p-n diodes, and other devices for electronic circuits that can be stretched or compressed to similarly large levels of strain.
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We thank T. Banks for help with processing using the facilities at the Frederick Seitz Materials Research Laboratory. This work was supported by the Defense Advanced Research Projects Agency–funded Air Force Research Laboratory–managed Macroelectronics Program Contract FA8650-04-C-7101, by the U.S. Department of Energy under grant DEFG02-91-ER45439, and by NSF under grant DMI-0328162.
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Science
Volume 311 | Issue 5758
13 January 2006
13 January 2006
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American Association for the Advancement of Science.
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Received: 17 October 2005
Accepted: 5 December 2005
Published in print: 13 January 2006
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